The Field-Tuned Superconductor-Insulator Transition with and without Current Bias

The magnetic-field-tuned superconductor-insulator transition has been studied in ultrathin Beryllium films quench-condensed near 20 K. In the zero-current limit, a finite-size scaling analysis yields the scaling exponent product vz = 1.35 +/- 0.10 and a critical sheet resistance R_{c} of about 1.2R_{Q}, with R_{Q} = h/4e^{2}. However, in the presence of dc bias currents that are smaller than the zero-field critical currents, vz becomes 0.75 +/- 0.10. This new set of exponents suggests that the field-tuned transitions with and without dc bias currents belong to different universality classes.Comment: RevTex 4 pages, 4 figures, and 1 table minor change

A bright nanowire single photon source based on SiV centers in diamond

The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV-) color center in diamond is a possible candidate for such a single photon source. However, due to the high refraction index mismatch to air, color centers in diamond typically exhibit low photon out-coupling. An additional shortcoming is due to the random localization of native defects in the diamond sample. Here we demonstrate deterministic implantation of Si ions with high conversion efficiency to single SiV- centers, targeted to fabricated nanowires. The co-localization of single SiV- centers with the nanostructures yields a ten times higher light coupling efficiency than for single SiV- centers in bulk diamond. This enhanced photon out-coupling, together with the intrinsic scalability of the SiV- creation method, enables a new class of devices for integrated photonics and quantum science.Comment: 15 pages, 5 figure

Effect of in-plane line defects on field-tuned superconductor-insulator transition behavior in homogeneous thin film

Field-tuned superconductor-insulator transition (FSIT) behavior in 2D isotropic and homogeneous thin films is usually accompanied by a nonvanishing critical resistance at low $T$. It is shown that, in a 2D film including line defects paralle to each other but with random positions perpendicular to them, the (apparent) critical resistance in low $T$ limit vanishes, as in the 1D quantum superconducting (SC) transition, under a current parallel to the line defects. This 1D-like critical resistive behavior is more clearly seen in systems with weaker point disorder and may be useful in clarifying whether the true origin of FSIT behavior in the parent superconductor is the glass fluctuation or the quantum SC fluctuation. As a by-product of the present calculation, it is also pointed out that, in 2D films with line-like defects with a long but {\it finite} correlation length parallel to the lines, a quantum metallic behavior intervening the insulating and SC ones appears in the resistivity curves.Comment: 16 pages, 14 figure

Single ion implantation for single donor devices using Geiger mode detectors

Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single photon emission sources, and magnetic imaging using defect centers in diamond. Improving single ion detector sensitivity is linked to improving control over the straggle of the ion as well as providing more flexibility in lay-out integration with the active region of the single donor device construction zone by allowing ion sensing at potentially greater distances. Using a remotely located passively gated single ion Geiger mode avalanche diode (SIGMA) detector we have demonstrated 100% detection efficiency at a distance of >75 um from the center of the collecting junction. This detection efficiency is achieved with sensitivity to ~600 or fewer electron-hole pairs produced by the implanted ion. Ion detectors with this sensitivity and integrated with a thin dielectric, for example 5 nm gate oxide, using low energy Sb implantation would have an end of range straggle of <2.5 nm. Significant reduction in false count probability is achieved by modifying the ion beam set-up to allow for cryogenic operation of the SIGMA detector. Using a detection window of 230 ns at 1 Hz, the probability of a false count was measured as 1E-1 and 1E-4 for operation temperatures of 300K and 77K, respectively. Low temperature operation and reduced false, dark, counts are critical to achieving high confidence in single ion arrival. For the device performance in this work, the confidence is calculated as a probability of >98% for counting one and only one ion for a false count probability of 1E-4 at an average ion number per gated window of 0.015.Comment: 10 pages, 5 figures, submitted to Nanotechnolog

Density of states and magnetoconductance of disordered Au point contacts

We report the first low temperature magnetotransport measurements on electrochemically fabricated atomic scale gold nanojunctions. As $T \to 0$, the junctions exhibit nonperturbatively large zero bias anomalies (ZBAs) in their differential conductance. We consider several explanations and find that the ZBAs are consistent with a reduced local density of states (LDOS) in the disordered metal. We suggest that this is a result of Coulomb interactions in a granular metal with moderate intergrain coupling. Magnetoconductance of atomic scale junctions also differs significantly from that of less geometrically constrained devices, and supports this explanation.Comment: 5 pages, 5 figures. Accepted to PRB as Brief Repor

Anisotropic Magnetoconductance in Quench-Condensed Ultrathin Beryllium Films

Near the superconductor-insulator (S-I) transition, quench-condensed ultrathin Be films show a large magnetoconductance which is highly anisotropic in the direction of the applied field. Film conductance can drop as much as seven orders of magnitude in a weak perpendicular field (< 1 T), but is insensitive to a parallel field in the same field range. We believe that this negative magnetoconductance is due to the field de-phasing of the superconducting pair wavefunction. This idea enables us to extract the finite superconducting phase coherence length in nearly superconducting films. Our data indicate that this local phase coherence persists even in highly insulating films in the vicinity of the S-I transition.Comment: 4 pages, 4 figure RevTex, Typos Correcte

Deterministic nanoscale quantum spin-defect implantation and diffraction strain imaging

Local crystallographic features negatively affect quantum spin defects by changing the local electrostatic environment, often resulting in degraded or varied qubit optical and coherence properties. Few tools exist that enable the deterministic synthesis and study of such intricate systems on the nano-scale, making defect-to-defect strain environment quantification difficult. In this paper, we highlight state-of-the-art capabilities from the U.S. Department of Energy's Nanoscale Science Research Centers that directly address these shortcomings. Specifically, we demonstrate how complementary capabilities of nano-implantation and nano-diffraction can be used to demonstrate the quantum relevant, spatially deterministic creation of neutral divacancy centers in 4H silicon carbide, while investigating and characterizing these systems on the $\leqslant 25\,{\rm{nm}}$ scale with strain sensitivities on the order of $1\times {10}^{-6},$ relevant to defect formation dynamics. This work lays the foundation for ongoing studies into the dynamics and deterministic formation of low strain homogeneous quantum relevant spin defects in the solid state

Dynamics of short time--scale energy relaxation of optical excitations due to electron--electron scattering in the presence of arbitrary disorder

A non--equilibrium occupation distribution relaxes towards the Fermi--Dirac distribution due to electron--electron scattering even in finite Fermi systems. The dynamic evolution of this thermalization process assumed to result from an optical excitation is investigated numerically by solving a Boltzmann equation for the carrier populations using a one--dimensional disordered system. We focus on the short time--scale behavior. The logarithmically long time--scale associated with the glassy behavior of interacting electrons in disordered systems is not treated in our investigation. For weak disorder and short range interaction we recover the expected result that disorder enhances the relaxation rate as compared to the case without disorder. For sufficiently strong disorder, however, we find an opposite trend due to the reduction of scattering probabilities originating from the strong localization of the single--particle states. Long--range interaction in this regime produces a similar effect. The relaxation rate is found to scale with the interaction strength, however, the interplay between the implicit and the explicit character of the interaction produces an anomalous exponent.Comment: 4 pages, 3 EPS figure

Accommodating individual travel history and unsampled diversity in Bayesian phylogeographic inference of SARS-CoV-2

Spatiotemporal bias in genome sampling can severely confound discrete trait phylogeographic inference. This has impeded our ability to accurately track the spread of SARS-CoV-2, the virus responsible for the COVID-19 pandemic, despite the availability of unprecedented numbers of SARS-CoV-2 genomes. Here, we present an approach to integrate individual travel history data in Bayesian phylogeographic inference and apply it to the early spread of SARS-CoV-2. We demonstrate that including travel history data yields i) more realistic hypotheses of virus spread and ii) higher posterior predictive accuracy compared to including only sampling location. We further explore methods to ameliorate the impact of sampling bias by augmenting the phylogeographic analysis with lineages from undersampled locations. Our reconstructions reinforce specific transmission hypotheses suggested by the inclusion of travel history data, but also suggest alternative routes of virus migration that are plausible within the epidemiological context but are not apparent with current sampling efforts.status: publishe